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| Agilent 4N25 Phototransistor Optocoupler General Purpose Type Data Sheet Description The 4N25 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Response time, tr , is typically 3 s and minimum CTR is 20% at input current of 10 mA. Ordering Information Specify part number followed by Option Number (if desired). 4N25-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option W00 = 0.4" Lead Spacing Option 300 = Lead Bend SMD Option 500 = Tape and Reel Packaging Option Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4 ANODE 1 + IF 6 BASE Features * Response time (tr: typ., 3 s at VCE = 10 V, IC = 2 mA, RL = 100 ) * Current Transfer Ratio (CTR: min. 20% at IF = 10 mA, VCE = 10 V) * Input-output isolation voltage (Viso = 2500 Vrms) * Dual-in-line package * UL approved * CSA approved * IEC/EN/DIN EN 60747-5-2 approved * Options available: - Leads with 0.4" (10.16 mm) spacing (W00) - Leads bends for surface mounting (300) - Tape and reel for SMD (500) - IEC/EN/DIN EN 60747-5-2 approvals (060) Applications * I/O interfaces for computers * System appliances, measuring instruments * Signal transmission between circuits of different potentials and impedances Schematic VF CATHODE - 2 IC 5 COLLECTOR 1 1. ANODE 2. CATHODE 3. NC 2 3 4. EMITTER 5. COLLECTOR 6. BASE 4 EMITTER CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawings 4N25-000E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 Y Y WW 6.5 0.5 (0.256) 2.8 0.5 (0.110) DATE CODE *1 2.54 0.25 (0.1) 3.5 0.5 (0.138) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 0.26 (0.010) 7.62 ~ 9.98 ANODE 0.5 0.1 (0.02) DIMENSIONS IN MILLIMETERS AND (INCHES) 4N25-060E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 V Y Y WW 6.5 0.5 (0.256) 2.8 0.5 (0.110) 3.5 0.5 (0.138) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 0.26 (0.010) 7.62 ~ 9.98 ANODE DATE CODE *1 2.54 0.25 (0.1) 0.5 0.1 (0.02) DIMENSIONS IN MILLIMETERS AND (INCHES) 4N25-W00E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 Y Y WW 6.5 0.5 (0.256) 2.8 0.5 (0.110) 3.5 0.5 (0.138) 6.9 0.5 (0.272) 2.3 0.5 (0.09) 0.5 0.1 (0.02) 0.26 (0.010) 10.16 0.5 (0.4) ANODE DATE CODE *1 DIMENSIONS IN MILLIMETERS AND (INCHES) 2.54 0.25 (0.1) 4N25-300E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 Y Y WW 6.5 0.5 (0.256) 1.2 0.1 (0.047) DATE CODE *1 3.5 0.5 (0.138) 0.35 0.25 (0.014) 0.26 (0.010) ANODE 2.54 0.25 (0.1) 1.0 0.25 (0.39) 10.16 0.3 (0.4) DIMENSIONS IN MILLIMETERS AND (INCHES) 2 Temperature (C) Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above. 30 seconds 250C 217C 200C 260C (Peak Temperature) 150C 60 sec 25C 60 ~ 150 sec 90 sec Time (sec) 60 sec Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, V iso (AC for 1 minute, R.H. = 40 ~ 60%) -55C to +150C -55C to +100C 260C for 10 s 80 mA 6V 150 mW 100 mA 30 V 7V 70 V 150 mW 250 mW 2500 Vrms 3 Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Floating Capacitance IC x 100% IF Symbol VF IR Ct ICEO BVCEO BVECO BVCBO IC CTR VCE(sat) tr tf Riso Cf Min. - - - - 30 7 70 2 20 - - - 5 x 1010 - Typ. 1.2 - 50 - - - - - - 0.1 3 3 1 x 1011 1 Max. 1.5 10 - 50 - - - - - 0.5 - - - - Units V A pF nA V V V mA % V s s pF Test Conditions IF = 10 mA VR = 4 V V = 0, f = 1 KHz VCE = 10 V, IF = 0 IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 10 V IF = 50 mA, IC = 2 mA VCE = 10 V, IC = 2 mA RL = 100 DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz * CTR = PC - COLLECTOR POWER DISSIPATION - mW 100 IF - FORWARD CURRENT - mA 200 IF - FORWARD CURRENT - mA 500 TA = 75C 200 100 50 20 10 5 2 1 -25 0 25 50 75 100 125 80 150 TA = 50C TA = 25C TA = 0C TA = -25C 60 100 40 20 0 -55 50 -25 0 25 50 75 100 125 0 -55 0 0.5 1.0 1.5 2.0 2.5 3.0 TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C VF - FORWARD VOLTAGE - V Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs. temperature. Figure 3. Forward current vs. forward voltage. 4 50 15 IC - COLLECTOR CURRENT - mA VCE = 10 V TA = 25C RELATIVE CURRENT TRANSFER RATIO - % CTR - CURRENT TRANSFER RATIO - % TA = 25C IF = 40 mA PC (MAX.) 300 IF = 10 mA VCE = 10 V 40 10 IF = 30 mA 200 30 20 RBE = 10 0 0.1 0.2 500 k 0.5 1 2 100 k 5 10 20 50 100 IF = 20 mA 5 IF = 10 mA IF = 5 mA 0 0 5 10 15 100 0 -55 -25 0 25 50 75 100 IF - FORWARD CURRENT - mA VCE - COLLECTOR-EMITTER VOLTAGE - V TA - AMBIENT TEMPERATURE - C Figure 4. Current transfer ratio vs. forward current. Figure 5. Collector current vs. collectoremitter voltage. Figure 6. Relative current transfer ratio vs. temperature. ICEO - COLLECTOR DARK CURRENT - A 0.3 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V IF = 50 mA IC = 2 mA 10-6 5 100 VCE = 10 V RESPONSE TIME - s 10-7 5 50 20 10 5 2 1 0.5 0.2 0.2 10-8 5 VCE = 10 V IC = 2 mA TA = 25C tf tr td 10-9 5 10 -10 5 0.1 ts 10-11 5 10-12 5 0 -55 -25 0 25 50 75 100 10-13 -55 -25 0 20 40 80 100 125 0.1 0.05 0.1 0.2 0.5 1 2 5 10 20 50 TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C RL - LOAD RESISTANCE - k Figure 7. Collector-emitter saturation voltage vs. temperature. Figure 8. Collector dark current vs. temperature. Figure 9. Response time vs. load resistance. VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V 5 IC = 0.5 mA IC = 2 mA VOLTAGE GAIN AV - dB 0 5 4 3 2 1 0 0 -5 RL = 10 k -10 RL = 1 k RL = 100 IC = 1 mA IC = 3 mA IC = 6 mA VCE = 5 V IC = 2 mA TA = 25C 7 TA = 25C 6 -15 -20 0.5 1 2 5 10 20 50 100 200 500 5 10 15 IC = 7 mA 20 25 30 f - FREQUENCY - kHz IF - FORWARD CURRENT - mA Figure 10. Frequency response. Figure 11. Collector-emitter saturation voltage vs. forward current. 5 Test Circuit for Response Time Test Circuit for Frequency Response VCC VCC RD INPUT RL OUTPUT RD RL OUTPUT ~ INPUT OUTPUT 10% 90% td tr ts tf www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5989-0292EN November 3, 2004 5989-1733EN |
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